Shot noise behaviour of subthreshold MOS transistors
نویسندگان
چکیده
منابع مشابه
Shot noise behaviour of subthreshold MOS transistors
2014 It is shown that assuming weak inversion, low drain current asymptotic value of the gate equivalent noise resistor is given by n2/2 UT/ID, corresponding to shot noise. Measurements confirming this theory as well as flicker noise measurements on n and p channel transistors integrated with either bulk or SOS CMOS silicon gate technology are presented. REVUE DE PHYSIQUE APPLIQUÉE TOME 13, DÉC...
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ژورنال
عنوان ژورنال: Revue de Physique Appliquée
سال: 1978
ISSN: 0035-1687
DOI: 10.1051/rphysap:019780013012071900